STGW80H65DFB Integrierte Schaltung Chip Trench Gate Feld-Stop Hochgeschwindigkeits-HB-Serie IGBT-Transistoren

Chip der integrierten Schaltung
May 29, 2025
Kategorieverbindung: Chip der integrierten Schaltung
Brief: Discover the STGW80H65DFB Integrated Circuit Chip, a high-speed HB Series IGBT Transistor with a trench gate field-stop structure. Ideal for photovoltaic inverters and high-frequency converters, this 650V 80A device offers optimal efficiency with low saturation voltage and safe paralleling capabilities.
Related Product Features:
  • Fortgeschrittene Schützengatter-Feldstop-Struktur für hohe Effizienz.
  • 650V collector-emitter breakdown voltage and 80A collector current.
  • Hochgeschwindigkeits-Schaltreihen mit minimiertem Rückenstrom.
  • Low saturation voltage: VCE(sat) = 1.6V (typ.) @ IC = 80A.
  • Positive VCE(sat) temperature coefficient for safer paralleling.
  • Strenge Parameterverteilung, die eine gleichbleibende Leistung gewährleistet.
  • Very fast soft recovery antiparallel diode for enhanced reliability.
  • Operating temperature range: -55°C to 175°C (TJ).
Fragen und Antworten:
  • What is the maximum junction temperature of the STGW80H65DFB?
    The maximum junction temperature is TJ = 175°C.
  • What applications is the STGW80H65DFB suitable for?
    It is ideal for photovoltaic inverters and high-frequency converters.
  • Does the STGW80H65DFB support safe paralleling?
    Yes, its slightly positive VCE(sat) temperature coefficient and tight parameter distribution enable safe paralleling.