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Produktdetails:
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| Teilenummer: | Die in Absatz 1 genannten Anforderungen gelten nicht. | Drain-Source-Spannung (Vdss): | 800 V |
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| Strom – kontinuierlicher Abfluss (Id) bei 25 °C: | 53A (Tc) | Antriebsspannung (Max. Rds Ein, Min. Rds Ein): | 10V |
| Rds On (Max) @ Id, Vgs: | 140 mOhm @ 30A, 10V | Vgs(th) (Max) @ Id: | 5V @ 8mA |
| Hervorheben: | 800V Power MOSFET Transistor,53A N-Channel MOSFET,N-Channel Enhancement Mode Power MOSFET |
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IXFN60N80P Integrated Circuit Chip N-Channel Enhancement Mode 800V 53A Power MOSFET Transistors Product Overview Of IXFN60N80P The IXFN60N80P is an N-Channel Enhancement Mode 800V, 53A Power MOSFET Transistor. Polar™ HiPerFETs (IXF..) combine the strengths of the Polar Standard product family with a faster body diode, whose reverse recovery time (trr) is reduced to make them suitable for phase-shift bridge motor control and uninterruptible power supply (UPS) applications.
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