|
Produktdetails:
|
| Teilenummer: | IXTH200N10T | FET-Typ: | N-Kanal |
|---|---|---|---|
| Drain-Source-Spannung (Vdss): | 100 V | Strom – kontinuierlicher Abfluss (Id) bei 25 °C: | 200A (Tc) |
| Eintrittskapazität (Ciss) (Max) @ Vds: | 9400 pF bei 25 V | Leistungsdissipation (max): | 550 W (Tc) |
| Hervorheben: | 100V Power MOSFET,200A N-Channel MOSFET,TO-247-3 Trench Gate MOSFET |
||
IXTH200N10T Integrated Circuit Chip 100V 200A N-Channel Trench Gate Power MOSFETs TO-247-3 Product Overview Of IXTH200 The IXTH200N10T is a 100V, 200A N-Channel Enhancement Mode Trench Gate Power MOSFET housed in a TO-247-3 package. It belongs to a series of high-current, low-on-resistance trench-gate power MOSFETs designed for demanding power switching applications, including switch-mode power supplies, motor drives, inverters, DC-DC converters, and welding machines.
Ansprechpartner: Sales Manager
Telefon: 86-13410018555
Faxen: 86-0755-83957753