GT30J122 Integrated Circuit Chip Discrete IGBTs 600V Silicon N-Channel IGBT Transistor

GT30J122 Integrated Circuit Chip Discrete IGBTs 600V Silicon N-Channel IGBT Transistor​

Product Description Of GT30J122

GT30J122 is Discrete IGBTs——Silicon N-Channel IGBT Transistor.

Specification Of GT30J122

Features Of GT30J122

4th generation
Enhancement mode
High-speed switching : tf = 0.20 µs (typ.) (IC = 50 A)
Low saturation voltage : VCE(sat) = 1.7 V (typ.) (IC = 50 A)

Applications Of GT30J122

Dedicated to Current-Resonant Inverter Switching Applications
Dedicated to Partial-Switching Power Factor Correction (PFC) Applications

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FAQ
Q. Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q:Which Certificates do you have?
A:We are ISO 9001:2015 Certified Company and member of ERAI.
Q:Can you support small quantity order or sample?Is the sample free?
A:Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q:How to ship my order? Is it safe?
A:We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q:What about the lead time?
A:We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.