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| Teilenummer: | STD10NM60N | Transistorpolarität:: | N-Kanal |
|---|---|---|---|
| Zahl von Kanälen:: | 1 Kanal | Vds - Drain-Source-Durchbruchspannung:: | 600 V |
| ID - Kontinuierlicher Drainstrom:: | 10 A | Rds On - Drain-Source-Widerstand:: | 550 mOhms |
STD10NM60N Integrated Circuit Chip N-Channel 600V 10A 530mΩ MOSFET Transistors Product Description Of STD10NM60N STD10NM60N is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Specifications Of STD10NM60N
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