Mingjiada Electronics offers the C3M0120065L from stock. This 650V silicon carbide (SiC) MOSFET from Wolfspeed utilises an advanced TOLL package, features industrial-grade certification, and operates within a broad temperature range of -40°C to +175°C.
As a prime example of Wolfspeed's third-generation SiC MOSFET technology, the C3M0120065L achieves significant optimisation in conduction losses, switching performance, and power density.
C3M0120065L Core Features
The C3M0120065L achieves ultra-low on-resistance within the 650V voltage platform, with a typical value of just 12mΩ (at V_GS=18V, I_D=20A), supporting continuous drain currents up to 118A (at 25°C, T_C=100°C).
Low on-resistance: 157mΩ (maximum) @ 6.76A, 15V
High breakdown voltage: 650V
Fast switching performance: Gate charge (Qg) only 26nC @ 15V
High-temperature capability: Junction temperature range -40°C to +175°C
Industrial-grade drive voltage: +15V/-5V (recommended), maximum ±19V/-8V
The C3M0120065L's TOLL package (TO-263-7) not only delivers low thermal resistance and low lead inductance but also incorporates a Kelvin source connection design, significantly reducing switching losses and suppressing gate ringing.
C3M0120065L Technical Advantages
Developed on Wolfspeed's third-generation SiC MOSFET technology platform, the C3M0120065L delivers exceptional overall system efficiency and high-frequency operation capability.
Its robust body diode features extremely low reverse recovery charge (typical 66nC), substantially reducing switching losses and enhancing system reliability.
Compared to traditional silicon-based MOSFETs, the C3M0120065L exhibits more stable on-resistance characteristics and low parasitic capacitance across the entire temperature range, facilitating high power density designs.
C3M0120065L Product Attributes
Manufacturer: Wolfspeed
Product Type: Silicon Carbide MOSFET
Mounting Style: SMD/SMT
Package / Case: TOLL
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 650 V
Id - Continuous Drain Current: 21 A
Rds On - Drain On-Resistance: 157 mOhms
Vgs - Gate-Source Voltage: -8 V, +19 V
Vgs th - Gate-Source Threshold Voltage: 3.6 V
Qg - Gate Charge: 26 nC
Minimum Operating Temperature: -40°C
Maximum operating temperature: +175°C
Pd - Power dissipation: 86 W
Channel mode: Enhancement
Application Areas
The C3M0120065L is ideally suited for the following applications:
Server and telecommunications power supplies
Electric vehicle charging systems (on-board chargers (OBC), high-voltage DC-DC converters)
Energy storage systems (UPS, battery management systems)
Solar inverters
Industrial power supplies
Procurement Information
Mingjiada Electronics guarantees the C3M0120065L is brand new and original, with ample stock available for same-day dispatch.
The C3M0120065L is packaged in tape-and-reel (TR) and cut-to-length (CT) formats, with flexible minimum order quantities and samples available.
Contact Us
For procurement of C3M0120065L or detailed product documentation, please contact Mingjiada Electronics Power Devices Division:
Contact: Mr Chen
Tel: +86 13410018555
Email: sales@hkmjd.com
Website: www.integrated-ic.com
Company Address: Rooms 1239-1241, New Asia Guoli Building, Zhenzhong Road, Futian District, Shenzhen
Ihre Nachricht muss zwischen 20 und 3.000 Zeichen enthalten!
