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Firmenblog über ST Low Side Switch VND3NV04TR OMNIFET II™ Series Fully Autoprotected Power MOSFET

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ST Low Side Switch VND3NV04TR OMNIFET II™ Series Fully Autoprotected Power MOSFET
Neueste Unternehmensnachrichten über ST Low Side Switch VND3NV04TR OMNIFET II™ Series Fully Autoprotected Power MOSFET

ST Low Side Switch VND3NV04TR OMNIFET II™ Series Fully Autoprotected Power MOSFET

 

ST VND3NV04TR supplied by Mingjiada Electronics is a power MOSFET device integrating advanced protection features. Belonging to STMicroelectronics' OMNIFET II™ series, it is manufactured using VIPower™ M0-3 process technology. This VND3NV04TR is specifically designed for applications replacing standard power MOSFETs, suitable for operating scenarios spanning the DC to 50kHz frequency range.

 

Product Description Details
Basic Architecture: The VND3NV04TR is a single-channel low-side driver housed in a TO-252-3 (DPAK) package with a 2-lead plus tab configuration. This fully self-protected power switch integrates multiple protection features, enabling direct replacement of conventional power MOSFETs.
Input/Output Characteristics: The VND3NV04TR features a 1:1 input-output ratio with a non-inverting input configuration, employing a simple on/off control interface. This design ensures compatibility with standard power MOSFET usage, facilitating seamless upgrades and replacements in existing designs.
Technology Process: As a flagship product of the OMNIFET II series, the VND3NV04TR employs STMicroelectronics' advanced VIPower M0-3 technology to deliver a monolithic integrated smart power switch solution.

 

Specifications
Electrical Characteristics: The VND3NV04TR supports a maximum load voltage of 36V, a rated drain-source breakdown voltage of 40V, a continuous drain current of 3.5A, and a peak output current limit of 5A. With a typical on-resistance of 120mΩ, it delivers low power dissipation.
Switching Characteristics: The VND3NV04TR exhibits a turn-on time of 1.35μs and a turn-off time of 10μs, with both rise and fall times at 250ns. These parameters indicate suitability for medium-frequency switching applications.
Thermal Performance: The VND3NV04TR delivers a maximum power dissipation of 35W and operates reliably within a junction temperature range of -40°C to 150°C. This enables deployment in demanding operational environments.

 

Product Features
Integrated Protection: The VND3NV04TR offers comprehensive built-in protection, including linear current limiting, thermal shutdown, short-circuit protection, and integrated clamping. These features enable the VND3NV04TR to withstand demanding operating conditions, enhancing system reliability.
Diagnostic Feedback: The VND3NV04TR possesses the capability to detect fault states via input pins, providing diagnostic feedback functionality. This feature enables status monitoring, improving system maintainability.
Low Standby Power Consumption: The VND3NV04TR exhibits minimal input pin current consumption while incorporating ESD protection, complying with the requirements of the European Directive 2002/95/EC. These characteristics place particular emphasis on energy efficiency and reliability.

 

Application Areas
Industrial Control Systems: The VND3NV04TR is suitable for driving industrial resistive, inductive, and capacitive loads, applicable in scenarios such as power management and motor control. In these applications, the VND3NV04TR's protection features prevent device damage caused by overcurrent or overheating.
Automotive Electronics: With its wide operating temperature range of -40°C to 150°C, the VND3NV04TR is suitable for diverse load driving applications within automotive environments. Its robustness enables it to withstand the demanding conditions of automotive electronics.
Replacing Traditional MOSFETs: The VND3NV04TR is specifically designed to replace standard power MOSFETs, offering enhanced reliability and integration particularly in DC to 50kHz applications. Utilising the VND3NV04TR simplifies circuit design and reduces the number of external components required.

 

Summary
As a fully protected power MOSFET within the OMNIFET II™ family, the ST VND3NV04TR integrates comprehensive protection features with excellent electrical characteristics, delivering a highly reliable solution for industrial control and automotive electronics applications.

 

Mingjiada Electronics maintains long-term supply of the VND3NV04TR device. For further product information or sample enquiries, please visit the Mingjiada Electronics website (https://www.integrated-ic.com/) to view supply details.

Kneipen-Zeit : 2025-11-05 14:57:26 >> Nachrichtenliste
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