Firmenblog über Mingjiada Supply Infineon F-RAM Ferroelectric RAM, Supply Serial F-RAM Memory, Parallel F-RAM Memory

Mingjiada Supply Infineon F-RAM Ferroelectric RAM, Supply Serial F-RAM Memory, Parallel F-RAM Memory

Shenzhen Mingjiada Electronics Co., Ltd. — a long-standing supplier of the full range of Infineon memory products, including serial ferroelectric RAM (F-RAM) and parallel ferroelectric RAM (F-RAM). These devices combine the high-speed read/write capabilities of RAM with the non-volatility of ROM; their core advantages lie in high-speed writing, ultra-low power consumption and virtually unlimited read/write endurance. Mingjiada Electronics maintains stock of mainstream models and supports both small-batch samples and large-volume orders; backed by an efficient logistics system, we ensure rapid product delivery.

F-RAM (ferroelectric random-access memory or FeRAM) is a standalone non-volatile memory that instantly captures and retains critical data in the event of a power failure. It is ideally suited to mission-critical data logging applications, such as high-performance programmable logic controllers (PLCs) requiring high reliability, control and throughput, or patient monitoring devices designed to improve quality of life.

Mingjiada Electronics supplies the following Infineon serial F-RAM ferroelectric memory devices:
FM25V02A-G: 256-Kbit (32K × 8) serial ferroelectric RAM (F-RAM) with an SPI interface operating at up to 40 MHz.

FM25V05-G: 512-Kbit (64K × 8) serial F-RAM with highly durable non-volatile storage, operating at 2.0 V to 3.6 V, with a temperature range of –40°C to +85°C, an SPI bus rate of up to 40 MHz, and support for modes 0 and 3.

FM25V10-G: 1-Mbit (128K × 8) serial F-RAM memory with an SPI interface, operating at 2.0 V to 3.6 V, supporting an SPI clock rate of up to 40 MHz, with NoDelay™ write for instant data storage.

FM25V20A-DG: 2-Mbit (256K × 8) serial F-RAM memory, utilising advanced ferroelectric technology, with an operating voltage of 2.0 V to 3.6 V and a temperature range of –40°C to +85°C. Supports an SPI interface with a maximum speed of 40 MHz and NoDelay™ bus-speed writing.

FM25V20A-DGQ: 2-Mbit (256K × 8) serial F-RAM memory with extended temperature capability, operating at 2.0 V to 3.6 V, featuring NoDelay™ high-speed write capability and an SPI rate of up to 33 MHz (Modes 0/3), suitable for frequent, high-speed non-volatile storage applications in industrial and medical sectors.

FM25V20A-G: 2-Mbit (256 K × 8) serial F-RAM memory, operating at 2.0 V to 3.6 V, with a temperature range of –40 °C to +85 °C; features a maximum 40 MHz SPI interface for fast, delay-free writing, suitable for applications requiring frequent or rapid writing, such as industrial control and data acquisition.

FM1808B-SG: 256 Kbit (32 K × 8) parallel ferroelectric RAM (F-RAM) in a 28-pin SOIC package, compatible with SRAM and EEPROM. Operating voltage: 4.5 V to 5.5 V; temperature range: –40°C to +85°C.

FM18W08-SG: 256 Kbit (32 K × 8) byte-wide ferroelectric random-access memory (F-RAM), operating at 2.7 V to 5.5 V and within a temperature range of –40°C to +85°C, suitable for high-frequency write and high-reliability applications such as industrial, instrumentation and data logging.

Infineon’s F-RAM memory solutions offer a range of features, including:
NoDelay™ Write writes data to memory cells at bus speed without any setup time
Ferroelectric memory products are extremely durable, with over 100 trillion write cycles, making them more durable than floating-gate memory.
Ultra-low power consumption, using 200 times less energy than EEPROM and 3,000 times less than NOR flash.
Radiation-resistant, unaffected by radiation-induced soft errors that cause bit flips.

For further information on [Infineon] F-RAM ferroelectric memory products or to enquire about sample prices, please visit the Mingjiada Electronics website (https://www.integrated-ic.com/) for further supply details.